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| MITSUBISHI MEMORY CARD STATIC RAM CARDS 8/16-bit Data Bus Static RAM Card MF365A-J8CATXX MF3129-J8CATXX MF3257-J8CATXX MF3513-J8CATXX Connector Type MF31M1-J8CATXX Two- piece 68-pin MF32M1-J8CATXX MF34M1-J8CATXX 1. DESCRIPTION Mitsubishi's Static RAM cards provide large memory capacities on a device approximately the size of a credit card (85.6mmx54mmx3.3mm). The cards use a 8/16 bit data-bus. Available in 64KB, 128KB, 256KB, 512KB, 1 MB, 2 MB and 4 MB capacities, Mitsubishi's SRAM cards conform to the PC Card Standard. Mitsubishi achieved high density memory, while maintaining credit size by using a thin small outline packaging technology (TSOP). The TSOP surpasses conventional memory card chip-on-board packaging technology where larger, surface-mount devices result in a tradeoff between card size and optimum memory density. The TSOP, with external leads spaced on 20-mil centers, is over four times smaller than standard equivalent pin count surface-mount packages. This allows up to 8 memory ICs (plus interface circuitry) to be mounted in a card that in only 3.3mm thick. 4. PRODUCT LIST Item Type name MF365A-J8CATXX MF3129-J8CATXX MF3257-J8CATXX MF3513-J8CATXX MF31M1-J8CATXX MF32M1-J8CATXX MF34M1-J8CATXX Memory capacity 64KB 128KB 256KB 512KB 1MB 2MB 4MB 2. FEATURES nUses TSOP (Thin Small Outline Package) to achieve very high memory density coupled with high reliability, without enlarging card size nOne to 8 memory ICs can be mounted in a card that is only 3.3mm thick nElectrostatic discharge protection to 15kV nBuffered interface nWrite protect switch nAttribute memory n68pin nBuilt-in auxiliary battery 3. APPLICATIONS nOffice automation nData Communication nComputers nIndustrial nTelecommunications nConsumer Data Bus width(bits) Attribute memory Auxiliary battery 8/16 8KB E PROM 2 YES MITSUBISHI ELECTRIC 1/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 5. SUMMARY MF3XXX-J8CATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width. The card has a replaceable lithium main battery to maintain data in memory and has an auxiliary battery to maintain data in memory while the main battery is replaced. When the card is not use or the supply voltage drops, the main battery will automatically maintain data in memory. 6. FUNCTIONAL DESCRIPTION The function of the card is determined by the combination of the following five control signals, REG#, CE1#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5) (1)COMMON MEMORY FUNCTION ) When REG# signal is high level, the common memory area is selected. (a)READ MODE ) To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs A0-A21(4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the following functions according to the combination of CE1# and CE2#. When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card. The data can be dealt with lower data-bus(D0-D7). When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card. At this mode LSB of address-bus (A0) is ignored. In addition odd byte can be accessed through upper data-bus(D8-D15) when CE1# is set high level and CE2# is set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (A0 is ignored). When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes low power and the data-bus is placed in high impedance state (above functions of CE1# and CE2# are the same as in the following modes). When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is placed in high impedance state. (b)WRITE MODE ) To write, the memory address is first applied at inputs A0-A21(4MB) and the data is applied at output pins. Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing. (2)ATTRIBUTE MEMORY FUNCTION ) When REG# is set low level, the attribute memory area is selected. MF3XXX-J8CATXX series accommodates an attribute memory of 8KB E2PROM on even addresses. (a)READ MODE ) First set CE1# and CE2# low level or high level and select residing address (even address). Data can be read by setting OE# low level and WE# high level. (b)WRITE MODE ) Writing can be done either by byte-mode or page-mode. The page-mode write is the function to be able to write data of 32 bytes in a single write cycle. The page address is set by A6 to A13 (Please note that attribute memory exists in even bytes only). To write, set OE# high level and WE# low level. Data will be latched at the rising edge of WE#. After the first load unless WE# changes from high level to low level within 30s, the automatic erase/program starts and completes in 10ms or before. Page data can be latched if WE# transits from high level to low level before the 30s. Page-mode write also executes erase/program operation within 10ms. The page address must be maintained during the page data loading. (3)BATTERY ) When the card is used for long periods of time, eventually battery exhaustion occurs. If such a situation is encountered, replace any exhausted battery with a new one as directed in section 21.2 REPLACING BATTERY (page 14). The replacement battery model number is indicated under section 21 BATTERY SPECIFICATIONS(page 14). 7. WRITE PROTECT MODE When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, WP pin becomes "H" level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates "L" level). MITSUBISHI ELECTRIC 2/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 8 . PIN ASSIGNMENTS Pin Function Symbol No. 1 GND Ground 2 D3 3 D4 4 D5 Data I/O 5 D6 6 D7 7 CE1# Card enable 1 8 A10 Address input 9 OE# Output enable 10 A11 11 A9 12 A8 Address input 13 A13 14 A14 15 WE# Write enable 16 NC No connection 17 VCC Power supply voltage 18 NC No connection 19 A16 A16 (NC for 64KB type) 20 A15 21 A12 22 A7 23 A6 24 A5 Address input 25 A4 26 A3 27 A2 28 A1 29 A0 30 D0 31 D1 Data I/O 32 D2 33 WP Write protect 34 GND Ground Pin No. 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 Symbol Function GND CD1# D11 D12 D13 D14 D15 CE2# NC NC NC A17 A18 A19 A20 A21 VCC NC NC NC NC NC NC NC NC NC REG# BVD2 BVD1 D8 D9 D10 CD2# GND Ground Card detect 1 Data I/O Card enable 2 No connection A17 (NC for < 128KB types) A18 (NC for < 256KB types) A19 (NC for < 512KB types) A20 (NC for < 1MB type) A21 (NC for < 2MB type) Power supply voltage Address input No connection Attribute memory select Battery voltage detect 2 Battery voltage detect 1 Data I/O Card detect 2 Ground MITSUBISHI ELECTRIC 3/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 9 . BLOCK DIAGRAM (4MB) (MF34M1-J8CATXX) A21 A20 A0 A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 ADDRESSDECODER 9 CS# ADDRESSBUS BUFFERS COMMON MEMORY 8 19 4Mbit SRAMx8 OE# WE# CS# ATTRIBUTE MEMORY 8 8 DATA-BUS BUFFERS D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 CE1# CE2# WE# OE# REG# WP# WRITE PROTECT OFF ON 13 MODE CONTROL LOGIC 2 OE# 64Kbit WE# E2PROMx1 TO INTERNAL POWER SUPPLY VOLTAGE DETECTOR & POWER CONTROLLER VCC BVD2 BVD1 Auxiliary battery CD1# CD2# CR2025 GND MITSUBISHI ELECTRIC 4/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 10. FUNCTION TABLE Mode REG# CE1# Standby X H Read A (16bit) H L common Write A (16bit) H L common H L Read B (8bit) common H L Write B (8bit) common Read C (8bit) common Write C (8bit) common Output disable Read A (16bit) attribute Read B (8bit) attribute H H H H X L L L Read C (8bit) attribute Write A (16bit) attribute Write B (8bit) attribute Write C (8bit) attribute L L L L L L L H H X L L L H L L L H CE2# H L L H H H H L L X L H H L L H H L OE# X L H L L H H L H H L L L L H H H H WE# X H L H H L L H L H H H H H L L L L A0 X X X L H L H X X X X L H X X L H X I/O (D15~D8) High-impedance Odd Byte Data out Odd Byte Data in High-impedance High-impedance High-impedance High-impedance Odd Byte Data out Odd Byte Data in High-impedance Data out (unknown) High-impedance High-impedance Data out (unknown) don't care don't care don't care don't care I/O (D7~D0) Icc High-impedance standby Even Byte Active Data out Even Byte Active Data in Even Byte Active Data out Odd Byte Active Data out Even Byte Data in Active Odd Byte Data in Active High-impedance Active High-impedance High-impedance Even Byte Data out Even Byte Data out Data out (unknown) High-impedance Even Byte Data in Even Byte Data in don't care don't care Active Active Active Active Active Active Active Active Active Active Note 1 : H=VIH, L=VIL, X=VIH or VIL 11. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Vcc Supply voltage VI Input voltage VO Output voltage Topr1 Operating temperature 1 Topr2 Operating temperature 2 Tstg Storage temperature Conditions With respect to GND Read, Write Operation Data retention Excludes data retention Ratings -0.3~6.0 -0.3~VCC+0.3 0~VCC 0~60 0~60 -20~70 Unit V V V C C C 12. RECOMMENDED OPERATING CONDITIONS (Ta=0~55C, unless otherwise noted) Limits Parameter Symbol Min. Typ. Vcc Vcc Supply voltage 4.75 5.0 GND System ground 0 VIH High input voltage 2.4 VIL Low input voltage 0 Max. 5.25 VCC 0.8 Unit V V V V MITSUBISHI ELECTRIC 5/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 13. ELECTRICAL CHARACTERISTICS (Ta=0~55C, Vcc=5V5%, unless otherwise noted) Symbol Parameter Test conditions Limits Min. Typ. Max. VOH High output voltage IOH= -1.0mA 2.4 VOL Low output voltage IOL=2mA 0.4 IIH High input current VI=Vcc V 10 IIL Low input current VI=0V CE1#, CE2#, WE#, OE#, REG# -10 -70 Other inputs -10 IOZH High output current CE1#=CE2#=VIH or OE#=VIH WE#=VIH, 10 in off state VO=Vcc IOZL Low output current CE1#=CE2#=VIH or OE#=VIH WE#=VIH, -10 in off state VO=0V Icc 1 * 1 Active supply CE1#=CE2#=VIL, other inputs 64KB~512KB 170 current 1 =VIH or VIL,Outputs=open 1MB~4MB 230 Icc 1 * 2 Active supply 64KB~512KB 160 CE1#=CE2# 0.2V, other current 2 inputs 0.2V or 1MB~4MB 220 Vcc-0.2V, Outputs=open Icc 2 * 1 Standby supply CE1#=CE2#=VIH 64KB~4MB 10 current 1 other inputs=VIH or VIL (17) Icc 2 * 2 Standby supply 64KB~512KB 0.45 CE1#=CE2# Vcc-0.2V current 2 (7.45) other inputs 0.2V or 1MB~4MB 0.65 Vcc-0.2V (7.65) VBDET1 Battery detect Vcc=5V, Ta=25C 2.27 2.37 2.47 reference voltage VBDET2 Battery detect Vcc=5V, Ta=25C 2.55 2.65 2.75 reference voltage Note 2 : Currents flowing into the card are taken as positive (unsigned). 3 : Typical values are measured at Vcc=5V, Ta=25C. 4 : The figure in the parentheses indicates the standby current limits when the built-in auxiliary battery is not fully charged. Unit V V A A A A mA mA mA mA V V 14. CAPACITANCE Symbol CI Parameter Input capacitance Test conditions VI=GND, vi=25mVrms f=1MHZ, Ta=25C Vo=GND, vo=25mVrms f=1MHz, Ta=25C Min. Limits Typ. Max. 30 Unit pF CO Output Capacitance 20 pF Note 5 : These parameters are not 100% tested. MITSUBISHI ELECTRIC 6/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 15. SWITCHING CHARACTERISTICS Read Cycle (Ta=0~55C, VCC=5V5%, unless otherwise noted) Symbol tcR ta(A) ta(CE) ta(OE) tdis(CE) tdis(OE) ten(CE) ten(OE) tV(A) Read cycle time Address access time Card enable access time Output enable access time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time (after address change) 5 5 0 Parameter Limits Min. Max. 150 150 150 75 75 75 Unit ns ns ns ns ns ns ns ns ns 16. TIMING REQUIREMENTS Write Cycle (Ta=0~55C, Vcc=5V5%, unless otherwise noted) Symbol Parameter Limits Min. Max. Unit tcW tw(WE) tsu(A) tsu(A-WEH) tsu(CE-WEH) t(D-WEH) th(D) trec(WE) tdis(WE) tdis(OE) ten(WE) ten(OE) tsu(OE-WE) th(OE-WE) Write cycle time Write pulse width Address set up time Address set up time with respect to WE# high Card enable set up time with respect to WE# high Data set up time with respect to WE# high Data hold time Write recovery time Output disable time (from WE#) Output disable time (from OE#) Output enable time (from WE#) Output enable time (from OE#) OE# set up time with respect to WE# low OE# hold time with respect to WE# high 150 80 20 100 100 50 20 20 75 75 5 5 10 10 ns ns ns ns ns ns ns ns ns ns ns ns ns ns MITSUBISHI ELECTRIC 7/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS TIMING DIAGRAM Read Cycle tcR An VIH VIL VIH ta(A) ta(CE) tV(A) CE# VIL ten(CE) tdis(CE) ta(OE) VIH OE# VIL ten(OE) tdis(OE) VOH Dm (DOUT) VOL WE#="H" level REG#="H" level Hi-Z OUTPUT VALID Write Cycle (WE# control) tCW VIH An VIL VIH CE# VIL VIH OE# VIL VIH WE# VIL tSU(OE-WE) Dm (DIN) VIH Hi-Z t(D-WEH) th(OE-WE) th(D) tW(WE) tSU(A) trec(WE) tSU(A-WEH) tSU(CE-WEH) VIL tdis(OE) DATA INPUT STABLE tdis(WE) ten(OE) Hi-Z ten(WE) Dm (DOUT) VOL VOH REG#="H" level MITSUBISHI ELECTRIC 8/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS Write Cycle (CE# control) tCW VIH An VIL tSU(A) tSU(CE-WEH) trec(WE) VIH CE# VIL VIH WE# VIL t(D-WEH) th(D) Dm (DIN) VIH VIL Hi-Z DATA INPUT STABLE OE#="H" level REG#="H" level 17. SWITCHING CHARACTERISTICS (Attribute) Read Cycle (Ta=0~55C, Vcc=5V5%, unless otherwise noted) Symbol Parameter tcRR ta(A)R ta(CE)R ta(OE)R tdis(CE)R tdis(OE)R ten(CE)R ten(OE)R tV(A)R Read cycle time Address access time Card enable access time Output enable access time Output disable time (from CE#) Output disable time (from OE#) Output enable time (from CE#) Output enable time (from OE#) Data valid time after address change Limits Min. Max. 300 300 300 150 100 100 5 5 0 Unit ns ns ns ns ns ns ns ns ns MITSUBISHI ELECTRIC 9/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 18. TIMING REQUIREMENTS (Attribute) Write Cycle (Ta=055C, Vcc=5V5%, unless otherwise noted) Symbol Parameter tsu(A)R tsu(CE)R th(CE)R t(D-WEH)R th(D)R tsu(OE-WE)R th(OE-WE)R tw(WE)R tDLR tBLCR tcWR ten(OE)R trec(WE)R Address setup time CE# setup time CE# hold time Data setup time Data hold time OE# setup time OE# hold time Write pulse width Data latch time Byte load cycle time Write cycle time Output enable time from OE# Write recovery time Limits Min. Max. 30 40 30 120 40 30 40 170 120 0.3 30 10 5 30 Unit ns ns ns ns ns ns ns ns ns s ms ns ns TIMING DIAGRAM (Attribute) Read Cycle tcRR An VIH VIL VIH CE# VIL ta(A)R ta(CE)R tV(A)R ten(CE)R VIH OE# VIL ten(OE)R ta(OE)R tdis(CE)R tdis(OE)R VOH Dm (DOUT) VOL WE#="H" level REG#="L" level Hi-Z OUTPUT VALID MITSUBISHI ELECTRIC 10/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS BYTE WRITE TIMING CHART trec(WE)R VIH An VIL VIH CE# VIL tsu(A)R tw(WE)R tsu(CE)R th(CE)R VIH WE# VIL VIH OE# VIL tdis(OE)R t(D-WEH)R Hi-Z ten(OE)R Hi-Z th(D)R tsu(OE-WE)R tcWR th(OE-WE)R DIN VIH VIL DOUT VOH VOL REG#="L" level MITSUBISHI ELECTRIC 11/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS PAGE MODE WRITE TIMING CHART An=(n>5) An (A0~A5) 0h 2h 4h 3Ch 3Eh CE# tsu(CE)R WE# tsu(A)R tsu(OE-WE)R OE# t(D-WEH)R DIN Hi-Z tdis(OE)R Hi-Z th(D)R tcWR trec(WE)R tw(WE)R th(CE)R tDLR tBLCR th(OE-WE)R DOUT REG#="L" level Note 6 : Test Conditions Input pulse levels : VIL=0.4V, VIH=2.8V Input pulse rise, fall time : tr=tf=10ns Reference voltage Input : VIL=0.8V, VIH=2.4V Output : VOL=0.8V, VOH=2.0V (ten and tdis are measured when output voltage is 500mV from steady state. ) Load : 100pF + 1 TTL gate 5pF + 1 TTL gate (at ten and tdis measuring) 7: Indicates the don't care input 8 : Writing is executed in overlap of CE# and WE# are "L" level. (only for Common Memory) 9 : Don't apply inverted phase signal externally when Dm pin is in output mode. 10 : CE# is indicated as follows: Read A/Write A : CE#=CE1#=CE2# Read B/Write B : CE#=CE1#, CE2#="H" level Read C/Write C : CE#=CE2#, CE1#="H" level MITSUBISHI ELECTRIC 12/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 19. ELECTRICAL CHARACTERISTICS BATTERY BACKUP (Ta=0~55C, unless otherwise noted) Symbol Parameter Test conditions VBATT Vi(CE) Back-up enable battery voltage Card enable voltage All pins open 2.4VVCC5.25V 0VVCC<2.4V 64KB 128KB 256KB 512KB 1MB 2MB 4MB 64KB 128KB 256KB 512KB 1MB 2MB 4MB Min. 2.6 2.4 Vcc-0.1 Limits Typ. Unit Max. V V Vcc Battery back-up supply current All pins open, VBATT=3V, Ta=25C Icc (Bup) All pins open, VBATT=3V Battery back-up supply current Vcc+0.1 3 3 3 5 3 5 9 30 30 30 50 30 50 90 A A 20. TIMING REQUIREMENTS (Ta=0~55C, unless otherwise noted) Symbol Parameter tpr tpf tsu(Vcc) trec(Vcc) Power supply rise time Power supply fall time Setup time at power on Recovery time at power off Min. 0.1 3 20 1000 Limits Typ. Max. 300 300 Unit ms ms ms ns CARD INSERTION/REMOVAL TIMING DIAGRAM tpf VCC VCC MIN 90% trec(VCC) VIH 10% CE1#, CE2# tpr 90% 10% VIH VCC MIN tsu(VCC) VCC CE1#, CE2# 21. BATTERY SPECIFICATIONS Please use the following coin type lithium battery. Type of main battery; CR2025 or equivalents 21.1 BATTERY LIFE EXPECTANCY The calculated main battery's life expectancies are as follows. Card Type main battery's life (when the card is left continuously) MF365A-J8CATXX 5.9years MF3129-J8CATXX 5.9years MF3257-J8CATXX 5.9years MF3513-J8CATXX 3.6years MF31M1-J8CATXX 5.9years MF32M1-J8CATXX 3.6years MF34M1-J8CATXX 2.0years Conditions; Temperature : 25C Humidity : 60%RH MITSUBISHI ELECTRIC 13/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS 21.2 REPLACING BATTERY MF3XXX-J8CATXX series have two batteries inside the card as follows. Lithium battery; for main battery (replaceable) Rechargeable battery; for auxiliary battery (not replaceable) For main battery replacement, perform the following procedure. Performing any other procedures will lose the data recorded in the IC card. (1)Have on hand a new main battery that has the same model number as or is equivalent currently installed one. (2)Insert the IC card into the system and apply power to the IC card so that the auxiliary battery will be charged. (more than 5 minutes) (3)While pressing the main battery holder cam release levers inward, slowly withdraw the main battery holder. (4)With the new main battery set in the battery holder, insert it completely into the IC card. (5)If the battery holder is incorrectly oriented, it will not smoothly fit into its position or the IC card will bulge. If such a situation is encountered, properly reorient the battery and battery holder and try again. (6)Insert the battery holder until it clicks into position. 24. UL CLASS OF MAIN CARD PARTS (1)MAIN FRAME (2)PCB (3)PLASTIC PART OF CONNECTOR UL94V-0 UL94V-0 UL94V-0 25. THE BATTERY VOLTAGE DETECT SIGNALS (BVD1,2) ) BVD1 BVD2 Comment H H Battery operational H L Battery operational, but battery should be replaced L L Battery and data integrity is not kept Note11. The battery voltage detect signals indicate the present state of the battery. They do not guarantee the data retention. 26.CONCERNING THE SECURITY OF DATA There is always the possibility that a soft-error (this malfunction is not permanent hence it is called soft and the data can be restored by rewriting) may occur with semiconductor products. When keeping the important data within an IC card, remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) Keeping multiple copies of the data. (2) Addition of ECC or CRC by software or hardware. MITSUBISHI ELECTRIC 14/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS ! Warning ( if card with battery / card with auxiliary battery ) (1)Do not charge, short, disassemble, deform, heat, or throw the batteries into fire, as they may ignite, overheat, rupture or explode. (2)Place the batteries out of the reach of children. If somebody swallows them, they should see a doctor immediately. (3)When discarding or storing the batteries, wrap them individually with cellophane tape or other nonconductive material. If they are positioned in contact with any other metals or batteries, they may explode, rupture or leak electrolyte solution. ! Caution This product is not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for a special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits,(2)use of non-flammable material or (3)prevention against any malfunction or mishap. Notes regarding these materials lThese materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. l Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty's rights, originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. l All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. l For instruction on proper use of the IC card, thoroughly read the manual attached to the product before use. After reading please store the manual in s safe place for future reference. l The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. l If these products or technologies are subject the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. l Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. MITSUBISHI ELECTRIC 15/16 Apr. 1999 Rev. 1.2 MITSUBISHI MEMORY CARD STATIC RAM CARDS OUTLINE(68P-012) MITSUBISHI ELECTRIC 16/16 Apr.1999 Rev.1.2 |
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